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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 1/4 HSD468 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD468 is designed for general purpose low frequency power amplifier applications. Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ...................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 900 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ......................................................................................... 25 V VCEO Collector to Emitter Voltage ...................................................................................... 20 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current .............................................................................................................. 1 A Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE fT Cob Min. 25 20 5 85 Typ. 190 22 Max. 1 500 1 240 Unit V V V uA mV V MHz pF Test Conditions IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=20V, IE=0 IC=0.8A, IB=80mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% Classification of hFE Rank Range B 85-170 C 120-240 HSD468 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000.0 VCE(sat) @ IC=10IB Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 2/4 Saturation Voltage & Collector Current 125 C 75 C 100 25 C o o o Saturation Voltage (mV) hFE 100.0 o 25 C hFE @ VCE=2V 10 1 10 100 1000 10.0 0.1 125 C o 75 C o 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 1000 Cutoff Frequency & Ic 1000 Cutoff Frequency (MHz).. . 75 C o ON Voltage (mV) VCE=2V 25 C 125 C o o 100 VBE(ON) @ VCE=2V 100 0.1 1 10 100 1000 10 1 10 100 1000 Collector Current-IC (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 10000 PT=1ms PT=100m s Safe Operating Area Collector Current-IC (mA) 1000 PT=1s 100 Capacitance (pF) 10 Cob 10 1 0.1 1 10 100 1000 1 1 10 100 Reverse Biased Voltage (V) Forward Voltage-Vce (V) HSD468 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 3/4 Power Temperature Derating 1000 900 IR Reflow Profile 260 240 220 10+/-2 sec PD , Power Dissipation (mW) 800 200 Temperature( C) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 180 160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 150+/-30 40+/-20 sec o Ta , Case Temperature (C) Time(sec) Temperature Profile for Dip Soldering 300 10+/-2 sec 250 Temperature( C) 200 o 150 100 120+/-20 sec 50 0 0 50 100 150 200 250 300 350 Time(sec) HSD468 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 4/4 2 Marking: H SD 468 Rank Control Code 3 C Style: Pin 1.Emitter 2.Collector 3.Base D H I E F G 1 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD468 HSMC Product Specification |
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